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| PD - 95296 IRF7317PBF Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description l l HEXFET(R) Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch -20V 6 5 P-CHANNEL MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Top View RDS(on) 0.029 0.058 SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C V DS V GS N-Channel 20 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 -5.0 -55 to + 150 C 150 -2.9 Maximum P-Channel -20 12 -5.3 -4.3 -21 -2.5 Units Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range IDM IS A W mJ A mJ V/ ns EAS IAR EAR dv/dt TJ, TSTG Thermal Resistance Ratings Maximum Junction-to-Ambient Parameter Symbol RJA Limit 62.5 Units C/W 5/25/04 IRF7317PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 20 -20 0.7 -0.7 Typ. Max. 0.027 0.031 0.023 0.029 0.030 0.046 0.049 0.058 0.082 0.098 20 5.9 1.0 -1.0 5.0 -25 100 18 27 19 29 2.2 3.3 4.0 6.1 6.2 9.3 7.7 12 8.1 12 15 22 17 25 40 60 38 57 42 63 31 47 49 73 900 780 430 470 200 240 Units V V/C V S A nA Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 4.5V, ID = 6.0A VGS = 2.7V, ID = 5.2A VGS = -4.5V, ID = -2.9A VGS = -2.7V, ID = -1.5A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 10V, I D = 6.0A VDS = -10V, I D = -1.5A VDS = 16V, V GS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, T J = 55C VDS = -16V, V GS = 0V, TJ = 55C VGS = 12V N-Channel I D = 6.0A, V DS = 10V, VGS = 4.5V P-Channel I D = -2.9A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0, RD = 10 P-Channel VDD = -10V, ID = -2.9A, RG = 6.0, RD = 3.4 N-Channel V GS = 0V, V DS = 15V, = 1.0MHz P-Channel V GS = 0V, V DS = -15V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 2.5 -2.5 A 26 -21 0.72 1.0 TJ = 25C, IS = 1.7A, VGS = 0V V -0.78 -1.0 TJ = 25C, IS = -2.9A, VGS = 0V 52 77 N-Channel ns 47 71 TJ = 25C, I F =1.7A, di/dt = 100A/s 58 86 P-Channel nC TJ = 25C, I F = -2.9A, di/dt = 100A/s 49 73 Repetitive rating; pulse width limited by Notes: Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) Surface mounted on FR-4 board, t 10sec. N-Channel ISD 4.1A, di/dt 92A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -2.9A, di/dt -77A/s, VDD V (BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 12mH RG = 25, IAS = 4.1A. (See Figure 12) P-Channel Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.9A. N-Channel 100 IRF7317PBF VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP 100 10 1.50V 1.50V 20s PULSE WIDTH TJ = 25 C 1 10 1 0.1 VDS , Drain-to-Source Voltage (V) 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 ISD , Reverse Drain Current (A) TJ = 150 C 10 TJ = 25 C 1 1.5 V DS = 10V 20s PULSE WIDTH 2.0 2.5 3.0 1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF7317PBF 2.0 N-Channel 0.032 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 6.0A RDS (on) , Drain-to-Source On Resistance () 1.5 V GS = 2.7V 0.028 1.0 0.024 0.5 VGS = 4.5V 0.020 0 10 20 30 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 A TJ , Junction Temperature ( C) ID , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.05 300 RDS (on) , Drain-to-Source On Resistance () EAS , Single Pulse Avalanche Energy (mJ) TOP 250 0.04 BOTTOM ID 1.8A 3.3A 4.1A 200 0.03 150 ID = 6.6A 0.02 100 50 0.01 0 2 4 6 8 A 0 25 VGS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( C) 50 75 100 125 150 Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current N-Channel 1600 IRF7317PBF 10 -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1200 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd ID = 6.0A VDS = 10V 8 Coss 800 6 4 Crss 400 2 0 1 10 100 A 0 0 5 10 15 20 25 30 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7317PBF 100 VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP P-Channel 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 10 VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP 1 -1.50V 1 -1.50V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 -ISD , Reverse Drain Current (A) TJ = 150 C 10 TJ = 25 C 1 1 1.5 V DS = -10V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode Forward Voltage P-Channel 2.0 0.8 IRF7317PBF R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -2.9A 1.5 RDS(on) , Drain-to-Source On Resistance ( ) 0.6 V GS = -2.7V 1.0 0.4 0.5 0.2 VGS = -4.5V 0.0 0 4 8 12 16 20 0.0 -60 -40 -20 0 20 40 60 80 V GS = -4.5V 100 120 140 160 A A TJ , Junction Temperature (C) -ID , Drain Current (A) -I D , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to-Source On Resistance ( ) 0.08 400 EAS , Single Pulse Avalanche Energy (mJ) 0.07 300 ID -1.3A -2.3A BOTTOM -2.9A TOP 0.06 0.05 I D = -5.3A 200 100 0.04 0.03 0.0 2.0 4.0 6.0 8.0 A 0 25 V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( C) 50 75 100 125 150 Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current IRF7317PBF 1400 P-Channel 10 -VGS , Gate-to-Source Voltage (V) 1200 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd I D = -2.9A VDS = -16V 8 C, Capacitance (pF) 1000 Ciss Coss 6 800 600 4 400 Crss 2 200 0 1 10 100 A 0 0 5 10 15 20 25 30 A - -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7317PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A C 0.10 [.004] y K x 45 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 IRF7317PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/04 |
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